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1. product pro?le 1.1 general description 800 ma npn low v cesat breakthrough in small signal (biss) resistor-equipped transistors (ret) family in small plastic packages. [1] also available in sot54a and sot54 variant packages (see section 2 ). 1.2 features 1.3 applications 1.4 quick reference data PBRN113E series npn 800 ma, 40 v biss rets; r1 = 1 k w , r2 = 1 k w rev. 01 1 march 2007 product data sheet table 1. product overview type number package nxp jeita jedec PBRN113Ek sot346 sc-59a to-236 PBRN113Es [1] sot54 sc-43a to-92 PBRN113Et sot23 - to-236ab n 800 ma output current capability n low collector-emitter saturation voltage v cesat n high current gain h fe n reduces component count n built-in bias resistors n reduces pick and place costs n simpli?es circuit design n 10 % resistor ratio tolerance n digital application in automotive and industrial segments n switching loads n medium current peripheral driver table 2. quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage open base - - 40 v i o output current [1] PBRN113Ek, PBRN113Et - - 600 ma PBRN113Es - - 800 ma
PBRN113E_ser_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 march 2007 2 of 17 nxp semiconductors PBRN113E series npn 800 ma, 40 v biss rets; r1 = 1 k w , r2 = 1 k w [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. 2. pinning information i orm repetitive peak output current PBRN113Ek, PBRN113Et t p 1 ms; d 0.33 - - 800 ma r1 bias resistor 1 (input) 0.7 1 1.3 k w r2/r1 bias resistor ratio 0.9 1 1.1 table 2. quick reference data continued symbol parameter conditions min typ max unit table 3. pinning pin description simpli?ed outline symbol sot54 1 input (base) 2 output (collector) 3 gnd (emitter) sot54a 1 input (base) 2 output (collector) 3 gnd (emitter) sot54 variant 1 input (base) 2 output (collector) 3 gnd (emitter) sot23; sot346 1 input (base) 2 gnd (emitter) 3 output (collector) 001aab347 1 2 3 006aaa145 2 3 1 r1 r2 001aab348 1 2 3 006aaa145 2 3 1 r1 r2 001aab447 1 2 3 006aaa145 2 3 1 r1 r2 006aaa144 12 3 sym007 3 2 1 r1 r2
PBRN113E_ser_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 march 2007 3 of 17 nxp semiconductors PBRN113E series npn 800 ma, 40 v biss rets; r1 = 1 k w , r2 = 1 k w 3. ordering information [1] also available in sot54a and sot54 variant packages (see section 2 and section 9 ). 4. marking [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china 5. limiting values table 4. ordering information type number package name description version PBRN113Ek sc-59a plastic surface-mounted package; 3 leads sot346 PBRN113Es [1] sc-43a plastic single-ended leaded (through hole) package; 3 leads sot54 PBRN113Et - plastic surface-mounted package; 3 leads sot23 table 5. marking codes type number marking code [1] PBRN113Ek g1 PBRN113Es n113es PBRN113Et *7g table 6. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - 40 v v ceo collector-emitter voltage open base - 40 v v ebo emitter-base voltage open collector - 10 v v i input voltage positive - +10 v negative - - 10 v i o output current PBRN113Ek, PBRN113Et [1] - 600 ma [2] [3] - 700 ma PBRN113Es [1] - 800 ma i orm repetitive peak output current PBRN113Ek, PBRN113Et t p 1 ms; d 0.33 - 800 ma
PBRN113E_ser_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 march 2007 4 of 17 nxp semiconductors PBRN113E series npn 800 ma, 40 v biss rets; r1 = 1 k w , r2 = 1 k w [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. p tot total power dissipation t amb 25 c PBRN113Ek, PBRN113Et [1] - 250 mw [2] - 370 mw [3] - 570 mw PBRN113Es [1] - 700 mw t j junction temperature - 150 c t amb ambient temperature - 65 +150 c t stg storage temperature - 65 +150 c (1) ceramic pcb, al 2 o 3 , standard footprint (2) fr4 pcb, mounting pad for collector 1 cm 2 (3) fr4 pcb, standard footprint fig 1. power derating curves for sot23 (to-236ab) and sot346 (sc-59a/to-236) table 6. limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit t amb ( c) - 75 175 125 25 75 - 25 006aaa998 200 400 600 p tot (mw) 0 (1) (2) (3)
PBRN113E_ser_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 march 2007 5 of 17 nxp semiconductors PBRN113E series npn 800 ma, 40 v biss rets; r1 = 1 k w , r2 = 1 k w 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. fr4 pcb, standard footprint fig 2. power derating curve for sot54 (sc-43a/to-92) t amb ( c) - 75 175 125 25 75 - 25 006aaa999 200 600 400 800 p tot (mw) 0 table 7. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air PBRN113Ek, PBRN113Et [1] - - 500 k/w [2] - - 338 k/w [3] - - 219 k/w PBRN113Es [1] - - 179 k/w r th(j-sp) thermal resistance from junction to solder point PBRN113Ek, PBRN113Et - - 105 k/w
PBRN113E_ser_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 march 2007 6 of 17 nxp semiconductors PBRN113E series npn 800 ma, 40 v biss rets; r1 = 1 k w , r2 = 1 k w fr4 pcb, standard footprint fig 3. transient thermal impedance from junction to ambient as a function of pulse duration for sot23 (to-236ab) and sot346 (sc-59a/to-236); typical values fr4 pcb, mounting pad for collector 1 cm 2 fig 4. transient thermal impedance from junction to ambient as a function of pulse duration for sot23 (to-236ab) and sot346 (sc-59a/to-236); typical values 006aab000 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 0.75 0.50 0.33 0.20 0.01 0.10 0.05 0.02 0 d = 1 006aab001 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 0.75 0.50 0.33 0.20 0.01 0.10 0.05 0.02 0 d = 1
PBRN113E_ser_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 march 2007 7 of 17 nxp semiconductors PBRN113E series npn 800 ma, 40 v biss rets; r1 = 1 k w , r2 = 1 k w ceramic pcb, al 2 o 3 , standard footprint fig 5. transient thermal impedance from junction to ambient as a function of pulse duration for sot23 (to-236ab) and sot346 (sc-59a/to-236); typical values fr4 pcb, standard footprint fig 6. transient thermal impedance from junction to ambient as a function of pulse duration for sot54 (sc-43a/to-92); typical values 006aab002 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 0.75 0.50 0.33 0.20 0.01 0.10 0.05 0.02 0 d = 1 006aab003 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 10 2 10 10 3 z th(j-a) (k/w) 1 0.75 0.50 0.33 0.20 0.01 0.10 0.05 0.02 0 d = 1
PBRN113E_ser_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 march 2007 8 of 17 nxp semiconductors PBRN113E series npn 800 ma, 40 v biss rets; r1 = 1 k w , r2 = 1 k w 7. characteristics [1] pulse test: t p 300 m s; d 0.02. table 8. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb =30v; i e =0a - - 100 na i ceo collector-emitter cut-off current v ce =30v; i b =0a - - 0.5 m a i ebo emitter-base cut-off current v eb =5v; i c =0a --4ma h fe dc current gain v ce =5v; i c =50ma 40 75 - v ce =5v; i c = 300 ma [1] 180 300 - v ce =5v; i c = 600 ma [1] 250 400 - v ce =5v; i c = 800 ma [1] 270 420 - v cesat collector-emitter saturation voltage i c = 50 ma; i b = 2.5 ma - 2535mv i c = 200 ma; i b =10ma - 6085mv i c = 500 ma; i b =10ma [1] - 160 220 mv i c = 600 ma; i b =6ma [1] - 320 550 mv i c = 800 ma; i b =8ma [1] - 0.68 1.15 v v i(off) off-state input voltage v ce =5v; i c = 100 m a 0.6 1 1.5 v v i(on) on-state input voltage v ce = 0.3 v; i c =20ma 1 1.3 1.8 v r1 bias resistor 1 (input) 0.7 1 1.3 k w r2/r1 bias resistor ratio 0.9 1 1.1 c c collector capacitance v cb =10v; i e =i e =0a; f=1mhz -7-pf
PBRN113E_ser_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 march 2007 9 of 17 nxp semiconductors PBRN113E series npn 800 ma, 40 v biss rets; r1 = 1 k w , r2 = 1 k w v ce =5v (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 40 c i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 40 c fig 7. dc current gain as a function of collector current; typical values fig 8. collector-emitter saturation voltage as a function of collector current; typical values i c /i b =50 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 40 c i c /i b = 100 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 40 c fig 9. collector-emitter saturation voltage as a function of collector current; typical values fig 10. collector-emitter saturation voltage as a function of collector current; typical values 006aab004 i c (ma) 10 - 1 10 3 10 2 110 1 10 10 2 10 3 h fe 10 - 1 (1) (2) (3) 006aab005 i c (ma) 10 10 3 10 2 10 - 1 v cesat (v) 10 - 2 (1) (2) (3) i c (ma) 10 10 3 10 2 006aab006 10 - 1 1 v cesat (v) 10 - 2 (1) (2) (3) i c (ma) 10 10 3 10 2 006aab007 10 - 1 1 v cesat (v) 10 - 2 (1) (2) (3)
PBRN113E_ser_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 march 2007 10 of 17 nxp semiconductors PBRN113E series npn 800 ma, 40 v biss rets; r1 = 1 k w , r2 = 1 k w v ce = 0.3 v (1) t amb = - 40 c (2) t amb =25 c (3) t amb = 100 c v ce =5v (1) t amb = - 40 c (2) t amb =25 c (3) t amb = 100 c fig 11. on-state input voltage as a function of collector current; typical values fig 12. off-state input voltage as a function of collector current; typical values 006aab008 i c (ma) 10 - 1 10 3 10 2 110 1 10 v i(on) (v) 10 - 1 (1) (3) (2) 006aab009 i c (ma) 10 - 1 10 2 10 1 1 10 v i(off) (v) 10 - 1 (1) (3) (2)
PBRN113E_ser_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 march 2007 11 of 17 nxp semiconductors PBRN113E series npn 800 ma, 40 v biss rets; r1 = 1 k w , r2 = 1 k w 8. package outline fig 13. package outline sot346 (sc-59a/to-236) fig 14. package outline sot54 (sc-43a/to-92) fig 15. package outline sot54a fig 16. package outline sot54 variant fig 17. package outline sot23 (to-236ab) 04-11-11 dimensions in mm 3.0 2.5 1.7 1.3 0.26 0.10 12 3 1.9 0.50 0.35 1.3 1.0 3.1 2.7 0.6 0.2 04-11-16 dimensions in mm 5.2 5.0 14.5 12.7 4.8 4.4 4.2 3.6 0.45 0.38 0.48 0.40 1.27 2.54 3 2 1 04-06-28 dimensions in mm 5.2 5.0 14.5 12.7 4.8 4.4 4.2 3.6 0.45 0.38 0.48 0.40 2.54 5.08 3 max 3 2 1 05-01-10 dimensions in mm 5.2 5.0 14.5 12.7 4.8 4.4 4.2 3.6 0.45 0.38 0.48 0.40 1.27 1.27 2.54 2.5 max 3 2 1 04-11-04 dimensions in mm 0.45 0.15 1.9 1.1 0.9 3.0 2.8 2.5 2.1 1.4 1.2 0.48 0.38 0.15 0.09 12 3
PBRN113E_ser_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 march 2007 12 of 17 nxp semiconductors PBRN113E series npn 800 ma, 40 v biss rets; r1 = 1 k w , r2 = 1 k w 9. packing information [1] for further information and the availability of packing methods, see section 13 . 10. soldering table 9. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 5000 10000 PBRN113Ek sot346 4 mm pitch, 8 mm tape and reel -115 - -135 PBRN113Es sot54 bulk, straight leads - -412 - sot54a tape and reel, wide pitch - - -116 tape ammopack, wide pitch - - -126 sot54 variant bulk, delta pinning - -112 - PBRN113Et sot23 4 mm pitch, 8 mm tape and reel -215 - -235 fig 18. re?ow soldering footprint sot346 (sc-59a/to-236) solder lands solder paste solder resist occupied area dimensions in mm sot346 1.00 0.70 (3x) 1.55 2.60 3.40 0.95 3.15 3 12 1.20 0.60 (3x) 0.70 (3x) 3.30 0.95 2.90
PBRN113E_ser_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 march 2007 13 of 17 nxp semiconductors PBRN113E series npn 800 ma, 40 v biss rets; r1 = 1 k w , r2 = 1 k w fig 19. wave soldering footprint sot346 (sc-59a/to-236) fig 20. re?ow soldering footprint sot23 (to-236ab) sot346 4.60 5.20 2.80 4.70 12 3 1.20 3.40 1.20 (2x) preferred transport direction during soldering solder lands solder resist occupied area dimensions in mm solder resist occupied area solder lands solder paste dimensions in mm sot023 1.00 0.60 (3x) 1.30 1 2 3 2.50 3.00 0.85 2.70 2.90 0.50 (3x) 0.60 (3x) 3.30 0.85
PBRN113E_ser_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 march 2007 14 of 17 nxp semiconductors PBRN113E series npn 800 ma, 40 v biss rets; r1 = 1 k w , r2 = 1 k w fig 21. wave soldering footprint sot23 (to-236ab) sot023 4.00 4.60 2.80 4.50 1.20 3.40 3 21 1.20 (2x) preferred transport direction during soldering dimensions in mm solder resist occupied area solder lands
PBRN113E_ser_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 march 2007 15 of 17 nxp semiconductors PBRN113E series npn 800 ma, 40 v biss rets; r1 = 1 k w , r2 = 1 k w 11. revision history table 10. revision history document id release date data sheet status change notice supersedes PBRN113E_ser_1 20070301 product data sheet - -
PBRN113E_ser_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 march 2007 16 of 17 nxp semiconductors PBRN113E series npn 800 ma, 40 v biss rets; r1 = 1 k w , r2 = 1 k w 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 12.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 12.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 13. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors PBRN113E series npn 800 ma, 40 v biss rets; r1 = 1 k w , r2 = 1 k w ? nxp b.v. 2007. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 1 march 2007 document identifier: PBRN113E_ser_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 5 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 8 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 9 packing information. . . . . . . . . . . . . . . . . . . . . 12 10 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 16 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 12.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 13 contact information. . . . . . . . . . . . . . . . . . . . . 16 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

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